Intern
Fakultät für Physik und Astronomie

SFB Seminar

Bismuthene on Silicon Carbide - Basic Properties and Recent Developments (Project C03)
Datum: 13.12.2018, 16:15 - 17:45 Uhr
Kategorie: Seminar
Ort: Hubland Süd, Geb. P1 (Physik), SE 2
Veranstalter: SFB 1170 ToCoTronics
Vortragende:r: Felix Reis - Universität Würzburg

Recently, we reported the realization of bismuthene – a fully planar honeycomb lattice formed by bismuth atoms - on the wide-gap substrate SiC(0001) [1]. Our theoretical analysis shows that Bi/SiC(0001) is a large-gap quantum spin Hall system, and demonstrates the crucial role of the substrate not just for the stabilization of the monolayer film, but also for its topological properties [2]. We investigate the spectroscopic properties with scanning tunneling spectroscopy, photoemission and density-functional theory.
I will begin with an introduction about the basic properties of the material system. Then I give an update on our latest findings and recent investigations which we did in collaboration with other SFB1170 members [3].


[1] F. Reis, G. Li, L. Dudy et al., Science 357, 287 (2017).
[2] G. Li, W. Hanke, E. Hankiewicz et al., PRB 98, 165146 (2018).
[3] F. Dominguez, B. Scharf, G. Li et al., PRB 98, 161407(R) (2018).

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