Experimental Physics VI

    Research Interests

    Colour Centers, Quantum Sensors and Microwave Emitters

    The development of a solid-state system for quantum information technologies and sensing applications is a very vibrant research area. An essential part of it, the spin degree of freedom, is an invaluable source of information as it provides an interface to the environment it is surrounded by. Our group is interested in 2D and 3D wide bandgap semiconductors, such as hexagonal boron nitride (hBN) and silicon carbide (SiC), which have recently attracted much interest as technologically perspective quantum platforms.

    Spin Effects in Organic Semiconductors and Devices

    Organic semiconductors are a promising class of materials for the next generation of light emitting diodes (OLED) and solar cells (OPV). Several phenomena in these semiconductors are related to the spin properties of triplet excitons and charge transfer states that are optically or electrically generated in device active layers and can influence the charge carrier generation and radiative recombination quantum efficiency. In other words, spin is a crucial parameter controlling the physical limits of device quantum efficiency.