Experimental Physics VI

    Quantum Sensors and Microwave Emitters

    Quantum Sensors and Microwave Emitters


    In recent years, wide-bandgap semiconductors, such as silicon carbide (SiC) attracted a lot of interest as a technologically perspective platform for quantum spintronics with the ability for single spin engineering and control. Our group is interested in atomic scale color centers in SiC, particularly silicon vacancies (VSi), which combine resonant optical addressability using near-infrared light and long spin coherence times. [2] With the method of optically detected magnetic resonance (ODMR), we found that these color centers have half-integer high-spin ground state (S = 3/2) and are therefore very promising for potential quantum sensing applications. [3] By using a focused proton beam, it is even possible to create defect spins on a chip with high spatial precision in three dimensions. [4] Future activities in this field will address various applications of highly coherent and deterministically positioned spin centers for hybrid spin-electronics, spin-photonics and microwave emitting quantum devices such as a room temperature maser. [5]


    Selected Literature:

    1. Room Temperature Initialisation and Readout of Intrinsic Spin Defects in a Van der Waals Crystal
    A. Gottscholl, M. Kianinia, V. Soltamov, C. Bradac, C. Kasper, K. Krambrock, A. Sperlich, M. Toth, I. Aharonovich, V. Dyakonov
    Nature Materials, 2020 [DOI: 10.1038/s41563-020-0619-6]

    2. Locking of electron spin coherence above 20 ms in natural silicon carbide
    D. Simin, H. Kraus, A. Sperlich, T. Ohshima, G. V. Astakhov, V. Dyakonov
    Phys. Rev. B 95, 161201R (2017). [DOI: 10.1103/PhysRevB.95.161201]

    3. Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide
    H. Kraus, V. A. Soltamov, F. Fuchs, D. Simin, A. Sperlich, P. G. Baranov, G. V. Astakhov, V. Dyakonov
    Sci. Rep., 4, 5303 (2014). [DOI: 10.1038/srep05303]

    4. 3D Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide
    H. Kraus, D. Simin, C. Kasper, Y. Suda, S. Kawabata, W. Kada, T. Honda, Y. Hijikata, T. Ohshima, V. Dyakonov, G. V. Astakhov
    Nano Letters 17, 2865-2870 (2017). [ DOI: 10.1021/acs.nanolett.6b05395] 

    5. Room temperature quantum microwave emitters based on spin defects in silicon carbide
    H. Kraus, V. A. Soltamov, D. Riedel, S. Väth, F. Fuchs, A. Sperlich, P. G. Baranov, V. Dyakonov, G. V. Astakhov
    Nat. Phys. 10, 157 (2014). [DOI: 10.1038/nphys2826]