Epitaxy of Quantum Materials

The focus of Epitaxy group, led by Dr. Fauzia Jabeen, is the growth of novel materials and nanostructures by molecular beam epitaxy (MBE). This group’s work ensure to successful conduction of variety of national and international projects where fabrication of Antimonides, Arsenides and phosphides is involved. Two dedicated MBE chambers, for each material system installed under one roof along with various processing and characterization tools not only enable fast growth optimization but also lead to carryout fabrication steps more smoothly. Few examples of ongoing work include Resonent Tunneling Diodes (RTDs), P-based microcavities, Single Photon Sources (SPS) are materials currently under optimization using Gas-Source MBE. Two Solid Source MBE machines, with Antimonide as primary group V source, are fully dedicated for Interband Cascade Lasers (ICLs), Interband Cascade Detectors (ICDs), Topological Insulators (TIs) and RTDs.  Arsenide based materials, which include microcavities, metamorphic buffer layers, GaAs membranes and SPS are probed via another pair of MBE chambers.