Würzburg ToCoTronics Colloquium
"Resonance Raman with infrared laser excitation in 2D materials: from graphene to MoTe2"
|Date:||02/09/2023, 4:15 PM - 6:00 PM|
|Location:||Hubland Süd, Geb. P1 (Physik), HS P (Röntgen HS)|
|Organizer:||SFB 1170 ToCoTronics|
|Speaker:||Leonetta Baldassarre - Department of Physics, Sapienza University of Rome|
Resonance Raman scattering has been proven to be a key asset to study small-gap semiconductors and materials that display a Dirac cone such as graphene.
I will discuss the resonance Raman spectrum obtained with excitation energy at 1.16 eV in graphene, where we find an enhancement of the electron phonon coupling , and in MoSe2, where, thanks to a resonant process it has been possible to identify the phonon branches involved in the higher order Raman modes. Last, I will present the resonant Raman spectrum of MoTe2 with excitation laser energy of 0.86 eV, discussing the perspectives of technological developments for resonance Raman in the infrared.
 A. C. Ferrari and D. M. Basko, Nat. Nanotech. 8, 235 (2013).
 T. Venanzi et al. arXiv:2212.01342
 S. Sotgiu, T. Venanzi, F. Macheda, E. Stellino, M. Ortolani, P. Postorino, and L. Baldassarre, Phys. Rev. B 106, 085204 (2022)
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