The physics of quantum transport and its application in novel nanoelectronic device concepts represent main activities of our research. By tailoring nanoelectronic properties the functioning for a given number of basic switching were enhanced. Based on monolithic designs we focus on the development of:
Electron microscope image of a full adder functioning at room temperature, which was realized by monolithically interconnected quantum wires and Y-branched junctions in a modulation doped GaAs/AlGaAs heterostucture.
Our work is engaged with robust ballistic transport realized by electron beam lithography and wet chemical etching of GaAs/AlGaAs heterostructures structures. In order to utilize ballistic transport even at room temperature shallow electron gases are laterally structured and narrow conducting channels only a few 10 nm wide are monolithically interconnected.