By using molecular beam epitaxy different III-V material systems are grown. The layers are used for the development of quantum wires and dots by high resolution lithography, for semiconductor lasers, for VCSELs and QCLs, for LEDs, for FETs, for optical spectroscopy on excitonic transitions and on high density effects etc..

For 1.5 µm wavelength devices InGa(Al)As, InGaAsP and AlGaSb heterostructures are developed. High quality InGaAs/InGaAlAs and InGaAs/InP quantum wells have been grown. High quality GaSb quantum wells with narrow luminescence linewidths and optically pumped vertical cavity surface emitting lasers have been obtained. GaSb lasers for the near IR spectral range are used in highly efficient sensor systems.

By using RF-MBE GaInNAs heterostructures are grown. These are applied in edge- and vertical-emitting laser diodes in the spectral range from 1,2 to 1.5µm. These GaAs-based dilute nitrides do show excellent high temperature performance and are supposed to be a direct competitor to InP-based devices in the near future. The work on GaInNAs is linked with a number of international cooperations, both university- and industry-based, which has made us one of the world's leading groups in this topic.