- three-chamber glove box system with integrated evaporator chamber (metals and organics)
- crystal growth set-up
- e-beam lithography (resolution up to ca. 50 nm, Raith), in cooperation with ZAE Bayern
- profilometer (Veeco Dektak 1500) organics)
- scanning probe microscope (AFM, SCM, EFM, c-AFM, KP, MFM, Veeco)
- scanning electron microscope with EDX (Ultra 55+, Carl Zeiss), in cooperation with ZAE Bayern
- X-Ray diffractometer and reflectometer (XRD, XRR GE), in cooperation with ZAE Bayern
- Lockin-based photophyics setup with various excitation sources (514nm, 532nm, 632nm, 980nm,1064nm) from 4-350K
- (field-dependent) Photoluminesence (PL)
- Photoinduced Absorption (PIA)
- Transient Absorption (TA) and photoluminescence setup (ns, fs-laser system)
- ns N2-pumped dye laser (400-700nm)
- fs spectroscopy (see below)
- femtosecond Ti:sapphire oscillator (Mai-Tai, Pulsdauer 100fs)
- cw pump laser (SpectraPhysics)
- 1 kHz regenerative amplifier (SpectraPhysics Spitfire)
- two optical parametric amplifier (OPA, TOPAS)
- grating monochomator with cooled CCD camera
- streak camera (time resolution 2 ps, Hamamatsu)
- home built transient charge transport setup with ps-excitation, variable frequency from 1 Hz to 1 kHz
- photo-CELIV (charge extraction by linearly increasing voltage)
- transient photoconductivity (time of flight, TOF)
- transient photocurrent and photovoltage (TPV, TPC)
- thermally stimulated current (TSC), current resolution fA, T=15-350K
- thermally stimulated luminescence (TSL)
- deep-level transient spectroscopy (DLTS)
- electron spin resonance spectrometer, ESR (X-Band, T=4,2-350K)
- light induced ESR
- optically detected ESR (PLDMR, PIA-DMR)
- Current-Voltage (J-V) set-up, variable temperature (T=15-350K)
- Quantum yield (IPCE) and J-V set up, optical and electrical bias, integrated in the glove box
- 4-probe conductivity setup (Janis Microprobe station, equipped with Agilent 4155C parameter analyzer, T=4-380K
- Impedance Analyzer