The SPINOSA project addresses novel contact concepts for the injection of spin polarized electrons into semiconductors. Spin transport in semiconductors will be the basis for new Spintronic devices which will give rise to a new class of semiconductor elements with enhanced functionality and low power consumption. This topic is addressed in two ways. Tunneling contacts and barriers for hot electron injection will be fabricated using transition metal ferromagnets that are currently available and are ferromagnetic at room temperature. As an alternative manganite contacts will be fabricated and optimized on semiconductor structures. Using optical and electrical characterization of light emitting diodes and lateral transport devices. The final goal of the project is the realization of spin injection at room temperature and the assessment of the technology and the boundary conditions for future industrial applications.